Record Pulsed Power Demonstration of a 2 micron GaSb-Based Optically Pumped Semiconductor Laser Grown Lattice-Mismatched on an AlAs/GaAs Bragg Mirror and Substrate (Postprint)

Abstract

An optically pumped semiconductor laser resonant periodic gain structure, grown lattice-mismatched on an AlAs/GaAs Bragg mirror, exhibits a peak pulsed power of 70 W when pumped with a pulsed 1064 nm neodymium doped yttrium aluminum garnet laser.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2009
Accession Number
ADA531614

Entities

People

  • C.P. Hains
  • D. Huffaker
  • Ganesh Balakrishnan
  • J. Hader
  • J. M. Yarborough
  • Jerome V. Maloney
  • Robert Bedford
  • Stephan W. Koch
  • T. J. Rotter
  • Yi-ying Lai
  • Yushi Kaneda

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Aluminum
  • Chemical Vapor Deposition
  • Demonstrations
  • Detectors
  • Distributed Bragg Reflectors
  • Lasers
  • Materials
  • New Mexico
  • Optically Pumped Semiconductor Lasers
  • Power
  • Pulsed Power
  • Semiconductor Lasers
  • Semiconductors
  • Substrates
  • United States

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics