High Electron Mobility Transistors (HEMT). Selected Papers

Abstract

Publication comprised of three papers: 1) Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure by Lin Zhou et al. Published in Applied Physics Letter 94, 121909 (2009); 2) Figures of merit in high-frequency and high-power GaN HEMTs by F. A. Marino et al. Published in Journal of Physics: Conference Series 193 (2009) 012040; and 3) Advanced electron Microscopy Characterization of GaN-based high electron mobility transistors by D. A. Cullen et al. Presented at the International Conference on Advanced Materials (11th), ICAM 2009, 20-25 September 2009, Rio de Janeiro, Brazil. This document contains color.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2010
Accession Number
ADA531904

Entities

People

  • Anas Mouti
  • D. K. Ferry
  • David A Cullen
  • David J Smith
  • F. A. Marin
  • Lin Zhou
  • Marco Saraniti
  • Martha R. Mccartney
  • N. Faralli
  • Stephen M. Goodnick

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Air Force
  • Air Force Research Laboratories
  • Electric Fields
  • Electrical Engineering
  • Electron Density
  • Electron Microscopy
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Figure Of Merit
  • High Electron Mobility Transistors
  • High Resolution
  • Mobility
  • Semiconductors
  • Transport Properties
  • Two Dimensional

Readers

  • Academic Conference Management
  • Military History
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics