Gallium Nitride UV Single Photon Source

Abstract

This report documents the development of electrically driven single photon source that operate near room temperature by using epitaxially grown GaN nanostructures. In order to realize the electrically driven single photon source operating near room temperature, we grew high-quality GaN quantum dots embedded in AlN thin films, and fabricate single photon emitting tunnel diodes that have GaN quantum dots in a microcavity structure with nano-sized aperture. Single electron and hole injection, which is the precondition for single photon emission, was driven by using Coulomb blockade effect in GaN quantum dots surrounded by AlN tunnel barriers.

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Document Details

Document Type
Technical Report
Publication Date
Nov 08, 2010
Accession Number
ADA532271

Entities

People

  • Seong-ju Park

Organizations

  • Gwangju Institute of Science and Technology

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystals
  • Diodes
  • Films
  • Gallium Nitrides
  • Heterojunctions
  • Materials
  • Nanostructures
  • Nanotechnology
  • Optical Properties
  • Optics
  • Quantum Computing
  • Quantum Dots
  • Quantum Wells
  • Semiconductors
  • Thin Films

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing