Formation of Defect Microstructures and Electrical Transport in VOx
Abstract
This report summarizes SRI's accomplishments from 07/01/05 to 06/30/10 on the, "Formation of Defect Microstructures and Electrical Transport in VOx" project. We have successfully carried out all tasks identified in our initial proposal and supplements and gained significant knowledge and understanding of electrical transport, optical properties, and electronic structures in vanadium oxide (VOx), the most favored material for uncooled microbolometers, and in related highly disordered systems. We have developed algorithms and quantitative modeling tools that compute a variety of transport properties and their dependence on defect microstructures in VOx. These tools are valuable for identifying VOx with appropriate compositions and defect structures for improved bolometer performance. Some of our results have been published in peer-reviewed journals and presented at professional conferences. In addition, we have established a close collaboration with experimentalists in both academia [the Multidisciplinary University Research Initiative (MURI) team led by Prof. Mark Horn at Pennsylvania State University] and industry (Dr. A. J. Syllaios from L3 Communications), who have been working on VOx and related systems. We have provided our understanding and physical insights to the experimentalists and helped analyze their experimental measurements. The collaboration with experimentalists has also broadened our research scope and helped us focus on the most relevant issues concerning VOx.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 2010
- Accession Number
- ADA532461
Entities
People
- Zhi G. Yu
Organizations
- SRI International