Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz)

Abstract

High-performance microwave and radio frequency integrated circuits are of interest to the Army. Several monolithic microwave integrated circuits (MMICs) were designed to enhance the performance of commercial-off-the-shelf (COTS) RF integrated circuits (RFICs) used in many wireless systems. This report documents a set of MMIC designs optimized for the 400 to 450 MHz ultra-high frequency (UHF) band and a dual band design that also includes 850 to 950 MHz operation. Additional incorporation of discrete matching elements into a single integrated IC will improve size and weight of wireless systems. This is an optimized set of designs based on a previous 1st pass design effort. Ten separate MMIC designs were designed and fabricated.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2010
Accession Number
ADA532987

Entities

People

  • John Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Circuits
  • Computer-Aided Design
  • Diagrams
  • Elements
  • Frequency
  • Frequency Bands
  • Gallium Arsenides
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Low Noise
  • Low Noise Amplifiers
  • Metals
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Radio Frequency
  • Semiconductors

Readers

  • Enterprise Information Systems Architecture and Joint Command Capability Interoperability Support.
  • Radar Systems Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics