Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications
Abstract
This is a proposal to develop an injection laser on Si using rare-earth doped GaN heteroepitaxially grown on Si substrates. The success of this approach will result in the availability of a laser light sources directly built on Si and operating at wavelengths throughout the visible and near-IR range. We have demonstrated the first ever visible lasing on Si using GaN:Eu grown on Si (with unique AlGaN transition layers) by optical pumping. The preliminary results are very encouraging: stimulated emission threshold of only ~110kW/cm2, optical gain of ~ 100/cm and loss of ~ 45/cm. The proposed program will develop an injection laser based on AlGaN-GaN:RE-AlGaN double heterojunction structures built on Si substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2010
- Accession Number
- ADA533167
Entities
People
- Andrew Steckl
- Mingyu Zhong
- Rui Wang
Organizations
- University of Cincinnati