Antimony-Based Type-II Superlattice Photodetectors

Abstract

Fundamental research issues and novel designs of Sb-based superlattice photodetectors are reported. These include the following: Accomplishment 1. Growth of new InAs/GaSb type-II superlattice material using MOCVD. We report the improved SL quality based on different interfacial layers (IF) and detector results using new growth schemes. Accomplishment 2. Demonstration of the first MOCVD grown InAs/GaSb type-II superlattice photodiodes. We have characterized the photodiodes' I-V curve, responsivity, and detectivity with improved performance. Accomplishment 3. Realization of the first InAs/InAsSb type-II superlattice structure grown by MOCVD. We have measured the structure's absorption spectra.

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Document Details

Document Type
Technical Report
Publication Date
Sep 06, 2010
Accession Number
ADA533220

Entities

People

  • Russell D. Dupuis
  • Shun L. Chuang

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Human Systems
  • Space

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Absorption Spectra
  • Abstracts
  • Chemical Vapor Deposition
  • Crystal Growth
  • Department Of Defense
  • Detection
  • Detectors
  • Engineering
  • Epitaxial Growth
  • Materials
  • Measurement
  • Photodetectors
  • Students
  • Surface Roughness
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy