Si Based Large Area Substrates for HgCdTe Infrared Detectors
Abstract
Development of a compliant Ge-on-Insulator (GeOI) substrate for growth of lattice-mismatched films, i.e. InSb and HgCdTe, was targeted. Fabrication combined the demonstrated compliancy of an ultrathin (< 3 nm) Ge film (on insulator) with nano-engineering of the step structure on vicinal Ge surfaces to yield a substrate with unsurpassed ability to elastically accommodate mismatch strain. Furthermore, since the GeOI growth substrate is Si-based, it is compatible with the wide range of tools for processing Si wafers, and therefore does not poses any inherent size, shape or handling restrictions that would limit its use in manufacturing or scalability to larger-sized wafers. Results to date provide clear evidence of the compliancy of the thin-film GeOI (100) substrate. However, evaluation of growth on a vicinal plane to suppress the formation of anti-phase domains (APDs), has not been completed. APDs are formed as a result of growth of a polar film on a non-polar substrate. Growth has been demonstrated on a 6?-off (100) GeOI substrate, but development of a 4?-off (211) GeOI substrate, as required for growing HgCdTe, has been delayed due to technical issues. These issues have been overcome and efforts continue to demonstrate growth of a HgCdTe/CdZnTe heterosturcture.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 06, 2010
- Accession Number
- ADA533415
Entities
People
- Orin W. Holland