Dynamics of Photo-Excited Carriers and Coherent Effects in GaN Under Subpicosecond Laser Pulse Excitation

Abstract

We applied the Semiconductor Bloch Equations formalism to study the subpicosecond dynamics of photo-excited carriers in gallium nitride (GaN). The kinetics equations were derived using a two-band model and taking into account the coherent interaction of semiconductor with the short laser pulse. Various scattering terms due to interaction of carriers with polar optical phonons and carrier-carrier interaction were taken into account. Effects of the conduction band nonparabolicity and static screening were included in our theory. We find reasonable agreement with the experimental results on the time-resolved photoluminescence rise-time dependence on excitation energy and carrier density, thus confirming the dominant role of polar optical phonons in the subpicosecond dynamics, and the effects of screening.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2010
Accession Number
ADA533792

Entities

People

  • E. Bellotti
  • Gregory A. Garrett
  • Michael Wraback
  • Sergey Rudin

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Boltzmann Equation
  • Compound Semiconductors
  • Computational Science
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Energy Bands
  • Equations
  • Gallium Nitrides
  • Laser Pulses
  • Lasers
  • Monte Carlo Method
  • Phonons
  • Quasiparticles
  • Scattering
  • Semiconductors
  • Time Dependence

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics