Surface Polar Phonon Dominated Electron Transport in Graphene

Abstract

The effects of surface polar phonons on electronic transport properties of monolayer graphene are studied by using a Monte Carlo simulation. Specifically, the low-field electron mobility and saturation velocity are examined for different substrates (SiC, SiO2, and HfO2) in comparison to the intrinsic case. While the results show that the low-field mobility can be substantially reduced by the introduction of surface polar phonon scattering, corresponding degradation of the saturation velocity is not observed for all three substrates at room temperature. It is also found that surface polar phonons can influence graphene electrical resistivity even at low temperature leading potentially to inaccurate estimation of the acoustic phonon deformation potential constant.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA534180

Entities

People

  • E. A. Barry
  • J. M. Zavada
  • K. W. Kim
  • M. B. Nardelli
  • Xiangchong Li

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Crystal Lattice Vibrations
  • Electron Density
  • Electron Energy
  • Electron Mobility
  • Electrons
  • Graphene
  • Low Temperature
  • Materials
  • Mobility
  • Monomolecular Films
  • Monte Carlo Method
  • Saturation
  • Scattering
  • Simulations
  • Substrates
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene