Collaborative Research and Development (CR&D). Task Order 0036: Physical and Chemical Processes of Operating Electronic Devices

Abstract

This research in support of the Air Force Research Laboratory, Materials and Manufacturing Directorate was conducted at Wright-Patterson AFB, Ohio from 12 July 2005 through 25 August 2006. Models were developed to validate physical and chemical processes that occur during the operation of wide bandgap electronic devices. Efforts have focused on AlGaN/GaN HEMT devices, and on aspects of the problem which impact device reliability estimates, such as internal temperature profiles, charge trapping, and electric fields. The bulk of the effort has relied on utilizing commercial electrothermal and thermal finite element simulators, and details of the practical use of two of these simulators is discussed.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2006
Accession Number
ADA534545

Entities

People

  • Eric R. Heller

Organizations

  • Universal Technology Corporation (United States)

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Electric Fields
  • Electrical Properties
  • Electromagnetic Fields
  • Failure Mode And Effect Analysis
  • Literature Surveys
  • Materials
  • Materials Science
  • P-N Junctions
  • Reliability
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Simulators
  • Three Dimensional
  • Two Dimensional

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics