Passivation of InAs and GaSb with Novel High kappa Dielectrics

Abstract

This is the final report of a project to understand the mechanism of surface Fermi level pinning/unpinning in InAs and GaSb, and further effectively passivate them using high dielectrics.

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Document Details

Document Type
Technical Report
Publication Date
Jan 05, 2011
Accession Number
ADA535004

Entities

People

  • J. R. Kwo
  • Minghwei Hong

Organizations

  • National Tsing Hua University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Structures
  • Chemistry
  • Compound Semiconductors
  • Dielectrics
  • Electrical Properties
  • Electron Microscopy
  • Energy Bands
  • Fermi Levels
  • High Resolution
  • Materials
  • Materials Science
  • Molecular Beam Epitaxy
  • Solid State Physics
  • Spectra
  • Subatomic Particles
  • X Rays

Readers

  • Semiconductor Device Technology