High kappa Dielectrics on InGaAs and GaN: Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

Abstract

This is the report of a project to grow high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy and atomic layer deposition.

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Document Details

Document Type
Technical Report
Publication Date
Dec 24, 2010
Accession Number
ADA535098

Entities

People

  • J. R. Kwo
  • Minghwei Hong

Organizations

  • National Tsing Hua University

Tags

DTIC Thesaurus Topics

  • Advanced Materials
  • Air Force
  • Complementary Metal-Oxide Semiconductors
  • Compound Semiconductors
  • Dielectric Permittivity
  • Dielectrics
  • Electron Mobility
  • Electrons
  • Epitaxial Growth
  • Fermi Levels
  • Materials
  • Materials Science
  • Mobility
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology