Antimonide-based Diodes for Terahertz Mixers

Abstract

Antimonide-based p+N junctions have been grown by molecular beam epitaxy and processed into diodes. The diodes have good rectification with ideality factors near 1, and high saturation current densities of 2.510 x 10(exp 2) A/cm2. S-parameter measurements to 50 GHz indicate a 1 Omega series resistance and a capacitance of 1.2 fF/micro-m2 for a 5 micro-meter diameter mesa diode. A cutoff frequency of 6.5 THz is estimated from the RC product. The high saturation current indicates that this diode will reach forward bias currents at substantially lower voltages than GaAs Schottky diodes. These properties suggest using the diode as a terahertz mixer.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2008
Accession Number
ADA536701

Entities

People

  • Brian R. Bennett
  • Doewon Park
  • H. S. Newman
  • J. G. Champlain
  • James C. Culbertson
  • Mario G. Ancona
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Band Gaps
  • Bipolar Junction Transistors
  • Current Density
  • Electronics Laboratories
  • Energy Bands
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Local Oscillators
  • Metal-Semiconductor Junctions
  • P-N Junctions
  • Power Electronics
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Terahertz Radiation
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Microwave Engineering.
  • Semiconductor Device Technology