Fermi Level Unpinning of GaSb (100) using Plasma Enhanced Atomic Layer Deposition of Al2O3

Abstract

N-type and p-type GaSb metal-oxide-semiconductor capacitors MOSCAPs with atomic-layer-deposited ALD and plasma-enhanced-ALD PEALD Al2O3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2O3 /GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density Dit whereas the PEALD Al2O3 /GaSb MOSCAPs show unpinned C-V characteristics low Dit. The reduction in Sb2O3 to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al2O3 /GaSb interface.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA536704

Entities

People

  • A. P. Kirk
  • Ayman Ali
  • Brian R. Bennett
  • D. A. Mourey
  • D. A. Zhao
  • H. S. Madan
  • M. K. Hudait
  • R. M. Wallace
  • Ronaldd D. Schrimpf
  • Supriyo Datta
  • T. N. Jackson

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Chemistry
  • Compound Semiconductors
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxides
  • Semiconductors
  • Valence Bond Theory
  • X Ray Photoelectron Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene