Advanced Composite High-k Gate Stack for Mixed Anion Arsenide-Antimonide Quantum Well Transistors

Abstract

This paper demonstrates the integration of a composite high-k gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves (i) EOT of 4.2 nm with <10-7A/cm2 gate leakage (ii) low Dit interface (~1x1012 /cm2/eV) (iii) high drift mu of 3,900-5,060 cm2/V-s at NS of 5x1011-3x1012/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) micro-S/micro-meter and drive current of 380 microA/micro-meters at VDS = 0.5V for Lg=micro-meters.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2010
Accession Number
ADA536711

Entities

People

  • Ankur Agrawal
  • Ayman Ali
  • Brian R. Bennett
  • E. Shelley Hwang
  • H. Madan
  • I. Geppert
  • I. Ramirez
  • M. Eizenberg
  • P. Schiffer
  • Rohan Misra
  • Ronaldd D. Schrimpf
  • S. E. Mohney
  • Supriyo Datta
  • T. N. Jackson

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Carrier Mobility
  • Composite Materials
  • Conduction Bands
  • Electron Mobility
  • Electronics
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Materials
  • Measurement
  • Mobility
  • Power Electronics
  • Quantum Wells
  • Transistors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing