Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene

Abstract

We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene exhibits large LMR from 2.2 K up to room temperature and that it can be best explained by a purely quantum mechanical model. We attribute the observation of LMR to inhomogeneities in the epitaxially grown graphene film. The large magnitude of the LMR suggests potential for novel applications in areas such as high-density data storage and magnetic sensors and actuators.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2010
Accession Number
ADA536713

Entities

People

  • Adam L. Friedman
  • Charles. R. Eddy Jr.
  • D. Kurt Gaskill
  • Edward Aifer
  • Frank Keith Perkins
  • Glenn G. Jernigan
  • James C. Culbertson
  • Jennifer K Hite
  • Joseph L. Tedesco
  • Paul M. Campbell
  • Rachael L. Myers-ward

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Diseases And Disorders
  • Electrons
  • Energy Bands
  • Films
  • Grain Size
  • Graphene
  • Graphitic Materials
  • Low Temperature
  • Magnetoresistance
  • Materials
  • Materials Laboratories
  • Measurement
  • Military Research
  • Silicon Carbide
  • Spectra

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing