Graphene-based Nanoelectronics
Abstract
A large program in graphene-based nanoelectronics has been initiated at the U.S. Army Research Laboratory (ARL) under the auspices of the ARL Director's Strategic Initiative (DSI). An array of capabilities for graphene growth, characterization, device fabrication, and device modeling has been established, and expertise has been gained in all facets of the research. Significant results have been achieved, including the world's highest reported fT for a graphene field-effect transistor (GFET) fabricated from chemical vapor deposition (CVD)-grown graphene; and a first-generation graphene-based supercapacitor. This research could potentially have enormous benefits for the American Soldier including smaller and more efficient power electronics and communication systems, transparent and flexible electronics, and wearable electronics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2011
- Accession Number
- ADA538063
Entities
People
- Barbara M. Nichols
- Frank Crowne
- James R. Wilson
- Madan Dubey
- Marc Ulrich
- Matthew Ervin
- Matthew L. Chin
- Osama M. Nayfeh
- Raju Nambaru
- Robert Proie
- Stephen Kilpatrick
- Tony Ivanov
Organizations
- United States Army Research Laboratory