Optical Properties of Superconducting Nanowire Single-Photon Detectors

Abstract

We measured the optical absorptance of superconducting nanowire single photon detectors. We found that 200-nm-pitch, 50%-fillfactor devices had an average absorptance of 21% for normally-incident front-illumination of 1.55-mum-wavelength light polarized parallel to the nanowires, and only 10% for perpendicularly-polarized light. We also measured devices with lower fill-factors and narrower wires that were five times more sensitive to parallel-polarized photons than perpendicular-polarized photons. We developed a numerical model that predicts the absorptance of our structures. We also used our measurements, coupled with measurements of device detection efficiencies, to determine the probability of photon detection after an absorption event. We found that, remarkably, absorbed parallel-polarized photons were more likely to result in detection events than perpendicular-polarized photons, and we present a hypothesis that qualitatively explains this result. Finally, we also determined the enhancement of device detection efficiency and absorptance due to the inclusion of an integrated optical cavity over a range of wavelengths (700-1700 nm) on a number of devices, and found good agreement with our numerical model.

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Document Details

Document Type
Technical Report
Publication Date
Jul 07, 2008
Accession Number
ADA538379

Entities

People

  • Andrew J. Kerman
  • Eric A. Dauler
  • Joel K. Yang
  • Karl K Berggren
  • Kristine M. Rosfjord
  • Vikas Anant

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Air Force
  • Detection
  • Detectors
  • Efficiency
  • Electric Fields
  • Films
  • Frequency Combs
  • Lasers
  • Materials
  • Measurement
  • Optical Phenomena
  • Optical Properties
  • Optics
  • Optomechanics
  • Quantum Computing
  • Refractive Index

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Manufacturing Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.