Ultrascaled AIN/GaN HEMT Technology for mm-wave RT Applications
Abstract
AIN/GaN heterostructures offer the highest possible 2D electron gas concentration with reasonable mobility while the thinnest possible barrier in single heterostructure based HEMTs. As a result, they are very attractive for ultra-scaled high-speed GaN transistors (ft/fmax > 200 GHz). Indeed our group was the first to demonstrate promising results of AIN/GaN HEMTs: Idmax of 2.3 A/mm, gm,ext of 480 S/mm and gm int of > 1 S/mm, and extrinsic ft/fmax of 52/60 GHz. [Zimmermann 2008 IEEE EDL] However, it has been challenging to harvest these properties due to ohmic contact formation and gate leakage issues. In this program we focused on the following tasks based on our early results: A. Improvement of the AIN/GaN heterostructure grown by MBE to achieve Rsh < 160 ohm/sq. B. Growth and fabrication of AIN/GaN/AIGaN back barrier HEMTs. C. Improvement of ohmic contacts and gate dielectrics to achieve Id,max of 2.5 A/mm and gm of 600 mS/mm. The research findings have been documented in two Ph.D. dissertations [Yu Cao 2010 and David Deen 2011] and six journal publications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2011
- Accession Number
- ADA538446
Entities
People
- Debdeep Jena
- Huili G. Xing
Organizations
- University of Notre Dame