Testing of Active Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz) in QFN Packages

Abstract

High-performance microwave and radio frequency integrated circuits are of interest to the Army. Several monolithic microwave integrated circuits (MMICs) were designed to enhance the performance of commercial-off-the-shelf (COTS) RF integrated circuits (RFICs) used in many wireless systems. Ten designs in a multi-project prototype GaAs fabrication included active RF front end designs as well as integrated passive matching circuits to reduce SWAP at the system level. The five active MMIC designs were assembled in small QFN packages and tested on PC boards with RF connectors. Small signal and performance measurements were completed for the designs. A previous report documents similar measurements made on the bare MMIC die with an RF probe station.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2011
Accession Number
ADA538476

Entities

People

  • John E. Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Amplifiers
  • Connectors
  • Diagrams
  • Energy Consumption
  • Frequency
  • Frequency Bands
  • Gallium
  • Gallium Arsenides
  • Insertion Loss
  • Integrated Circuits
  • Low Noise
  • Low Noise Amplifiers
  • Measurement
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Radio Frequency

Readers

  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics