A Numerical Technique for Removing Residual Gate-Source Capacitances When Extracting Parasitic Inductance for GaN High Electron Mobility Transistors (HEMTs)

Abstract

The design of monolithic microwave integrated circuits (MMIC) is dependent on the ability to generate accurate device models. Prior knowledge of the external parasitic components is required to determine the small signal model of the intrinsic device. A simple technique for determining and correcting for the gate-source capacitance during the extraction of the series inductance will be presented. This technique has worked well when integrated into existing small signal extraction procedures.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2011
Accession Number
ADA539647

Entities

People

  • Benjamin Huebschman
  • Pankaj B. Shah

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Charge Carriers
  • Circuits
  • Compound Semiconductors
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Equivalent Circuits
  • Frequency
  • High Electron Mobility Transistors
  • Impedance
  • Inductance
  • Mobility
  • Residuals
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics