Power Mems Development
Abstract
We continued development on the Version 3.1 (V3.1) DC-DC converter design using the polymer sacrificial-layer-style switches. To ensure that each switch was electrically isolated, the V3.1 switches were fabricated on three glass wafers. The structural layer consisted of silicon oxynitride deposited at 300 deg C. We observed some polymer delamination on less than about 10% of the wafer. Wet etching of the structural layer in buffered oxide etchant resulted in significant lateral undercutting and breaking of the switches at the anchor points during wet release. We electrically tested 13 switches and observed electrostatic movement between 5 and 30 V, depending on the switch style. No switch closure was observed, even when electrostatic actuation occurred. We are currently designing a revised mask design that incorporates more robust anchor points, larger electrostatic electrodes, and larger switch contact regions without release holes. We will fabricate the next set of switches following completion of the mask design.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 2011
- Accession Number
- ADA541013
Entities
People
- Drew Hanser
- John Bumgarner
Organizations
- SRI International