Passivation of InAs and GaSb with High κ Dielectrics - Growth, Structural, Chemical and Electrical Characterization

Abstract

This is the final report of a project in which chemical and electronic characteristics on Al2O3/Gd2O3/InAs interfaces were studied using x-ray photoelectron spectroscopy.

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Document Details

Document Type
Technical Report
Publication Date
Apr 21, 2011
Accession Number
ADA542092

Entities

People

  • J. Raynien Kwo
  • Minghwei Hong

Organizations

  • National Tsing Hua University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Complementary Metal-Oxide Semiconductors
  • Compound Semiconductors
  • Dielectrics
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Materials
  • Materials Science
  • Metal Oxide Semiconductors
  • Photoelectrons
  • Solid State Physics
  • Spectroscopy
  • Subatomic Particles
  • X Ray Photoelectron Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene