Ultralow-Threshold Electrically Pumped Quantum-Dot Photonic-Crystal Nanocavity Laser
Abstract
Efficient, low-threshold and compact semiconductor laser sources are under investigation for many applications in high-speed communications, information processing and optical interconnects. The best edge-emitting and vertical-cavity surface-emitting lasers have thresholds on the order of 100 microA (refs 1,2), but dissipate too much power to be practical for many applications, particularly optical interconnects. Optically pumped photonic-crystal nanocavity lasers represent the state of the art in low-threshold lasers; however, to be practical, techniques to electrically pump these structures must be developed. Here, we demonstrate a quantum-dot photonic-crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous-wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed-the lowest thresholds ever observed in any type of electrically pumped laser.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2011
- Accession Number
- ADA542179
Entities
People
- Bryan Ellis
- Eugene E. Haller
- Gary Shambat
- James Harris
- Jelena Vučković
- Marie A. Mayer
- Tomas Sarmiento
Organizations
- Stanford University