Towards High-Efficiency Mid-Infrared Diode Lasers Operating from 3-5 Microns

Abstract

We have actively pursued GaSb-based dilute-nitride diode lasers to cover the 3-5 micron regime. We significantly advanced the growth understanding of GaSb-based dilute-nitride lasers, culminating in the first observation of room-temperature photoluminescence from a GaSb-based dilute-nitride quantum well. While the growth of these metastable alloys is challenging, we have identified a critical new issue governing the ultimate performance of these devices: free-carrier absorption. Moreover, researchers already face this issue at shorter wavelengths (~ 3 microns). We have invented a novel method for mitigating these losses, specifically GaSb/ErSb/GaSb tunnel junctions, which we have developed through an Add-On Award. We have also developed a prototype GaInAsSb/AlGaAsSb laser structure to serve as a testbed for examining dilute-nitride active regions, as well as the novel tunnel junction device structure.

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Document Details

Document Type
Technical Report
Publication Date
Apr 02, 2011
Accession Number
ADA545935

Entities

People

  • Seth R. Bank

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Compound Semiconductors
  • Electronic Materials
  • Energy Bands
  • Engineering
  • Laser Diodes
  • Lasers
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Metallic Nanoparticles
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nanoparticles
  • Quantum Wells
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing