Scalable Multiplexed Ion Trap (SMIT) Program
Abstract
The Scalable Multiplexed Ion Trap II (SMIT II) program based at Georgia Tech Research Institute (GTRI) was funded by IARPA during the period from August 2008 through July 2010. The overall goal was to design, fabricate and test surface ion traps through a closely correlated, multi-disciplinary approach involving design, simulation, fabrication and test facilities at GTRI and the Nanotechnology Research Center (NRC) at Georgia Tech. During the SMIT II program, surface ion traps were produced by microfabrication with properties that match the behavior predicted by simulations and are both reproducible and reliable. The trap designs include straight sections that can contain ion chains up to 20 to 50 ions in length using anharmonic electrostatic potentials as well as trap junctions in the form of a 90 cross. Important advances have also been made in integrating optics into the surface trap architecture. Repeated transport over hundreds of microns was demonstrated with no ion loss, facilitated by the optimized software estimates of the required voltages and very accurate control on the microfabricated electrode dimensions. Ion motional frequencies are in good agreement with the simulations. In summary, excellent progress has been made in producing scalable, reliable, reproducible surface ion traps during the SMIT II program.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 08, 2010
- Accession Number
- ADA546007
Entities
People
- A. Ozakin
- Alexa Harter
- C. Shappert
- C. Volin
- D. Denison
- D. Faircloth
- F. Shaikh
- H. Hayden
- J. Amini
- Jungsang Kim
- Richart Slusher
- T. Killian
Organizations
- Georgia Tech Research Corporation