Development of Energy-Efficient Single-Electron Transistors with Oxide Nanoelectronics
Abstract
We report progress in creating nanoscale transistors at the LaAlO3/SrTiO3 interface using a rewritable conductive AFM technique. We have created LaAlO3/SrTiO3-based nano-transistors (SketchFETs) that operate at GHz frequencies. We have also demonstrated nanoscale phototransistors that are spectrally sensitive to visible and near-infrared light. We have also investigated the creation of "designer potential barriers" that allow the creation of nanoscale diodes. Finally, we have tested a physical model of the AFM writing mechanism, which shows that water vapor is an essential component to make these structures - an important step in developing devices in this material. For the remaining period we will further investigate the high frequency properties and SketchFETs, with a goal of quantifying power dissipation per drive cycle in these devices. We will also continue to develop single-electron transistor devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2010
- Accession Number
- ADA546191
Entities
People
- Jeremy Levy
Organizations
- University of Pittsburgh