Direct Comparison of Charge Collection in SOI Devices from Single-Photon and Two-Photon Laser Testing Techniques
Abstract
The amounts of charge collection by single-photon absorption (SPA) and by two-photon absorption (TPA) laser testing techniques have been directly compared using specially made SOI diodes. For SPA measurements and some TPA measurements, the back substrates of the diodes were removed by etching in XeF2. With the back substrates removed, the amount of TPA induced charge collection could be correlated to the amount of SPA induced charge collection. However, the amount of TPA induced charge collection for diodes with substrates did not correlate to the amount of SPA induced charge collection with the substrates removed. Part of this difference may be due to displacement currents generated in the TPA SOI diodes with the back substrate present. The laser spot size may also affect the correlation between TPA and SPA induced charge collection measurements. These results illustrate the complexity of interpreting TPA and SPA single-event upset measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 18, 2011
- Accession Number
- ADA546290
Entities
People
- Dale McMorrow
- Gyorgy Vizkelethy
- James R. Schwank
- Jeffrey Stevens
- Marty R. Shaneyfelt
- Pascale M. Gouker
- Paul E. Dodd
- Richard S. Flores
- Scot E. Swanson
- Scott M. Dalton
- Stephen B. Buchner
- Veronique Ferlet-cavrois
Organizations
- Massachusetts Institute of Technology