Theory and Device Modeling for Nano-Structured Transistor Channels

Abstract

We have developed two models to describe the behavior of field-effect transistors with nano-structured channels. The primary factor that limits the performance of the transistor is the presence of grain boundaries. In our macroscopic model, we have explicitly modified the field-effect mobility to include terms that are dependent upon both the local carrier concentration and longitudinal field. In our mesoscopic model, we more closely look at the role of the individual grains by incorporating ideas from percolation theory. In this model, the carrier statistics are connected to the site and bond occupation probabilities in the site-bond percolation problem in order to determine the threshold voltage.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2011
Accession Number
ADA546437

Entities

People

  • Isaiah P. Steinke
  • P. P. Ruden

Organizations

  • University of Minnesota

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Boundaries
  • Conduction Bands
  • Current Density
  • Electric Fields
  • Energy Levels
  • Equations
  • Experimental Data
  • Field Effect Transistors
  • Grain Boundaries
  • Materials
  • Mobility
  • Thin Film Transistors
  • Transistors
  • Two Dimensional
  • Voltage

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Theoretical Analysis.