High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays

Abstract

In this study, ZnO thin-film transistors (TFTs) were fabricated using channel layers deposited by plasma assisted ALD (PA-ALD) at low temperature. During the research high-performance ZnO TFTs were obtained by reducing residual carrier concentrations.

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Document Details

Document Type
Technical Report
Publication Date
Aug 19, 2011
Accession Number
ADA547983

Entities

People

  • Yukiharu Uraoka

Organizations

  • Nara Institute of Science and Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Demographic Cohorts
  • Electrical Properties
  • Films
  • Low Temperature
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Measurement
  • Physical Properties
  • Refractive Index
  • Residuals
  • Semiconductors
  • Surface Reactions
  • Thin Film Transistors
  • Thin Films
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.