Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

Abstract

In Part I of this project, attempts to develop low capacitance, depletion-mode ZnO-based thin-film transistors (TFTs) were studied using two approaches. The first approach used elevated substrate temperature growth of a-IGZO channel layers, but most of the devices exhibited enhancement-mode operation. The second approach studied the effect of hydrogenation of a-IGZO channel layers during post-annealing. Even though the device quality improved, depletion-mode operation was not achieved. Depletion-mode operation was achieved in Part II of this project to be reported separately.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 2011
Accession Number
ADA547984

Entities

People

  • Jae-hyung Jang

Organizations

  • Gwangju Institute of Science and Technology

Tags

DTIC Thesaurus Topics

  • Annealing
  • Ceramic Materials
  • Fabrication
  • Films
  • High Pressure
  • Hydrogen
  • Hydrogenation
  • Liquid Crystal Displays
  • Materials
  • Mobility
  • Organic Light Emitting Diodes
  • Semiconductors
  • Sputtering
  • Substrates
  • Thin Film Transistors
  • Thin Films
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.