Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates

Abstract

Non-polar m-plane AlxGa1-xN and Al1-xInxN alloy films and heterostructures were grown by metalorganic vapor phase epitaxy (MOVPE) in order to obtain fundamental understandings on the growth of m-plane nitrides and carrier transport mechanisms. These alloys are being investigated for potential use in normally-off heterojunction field effect transistors (HFETs).

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Document Details

Document Type
Technical Report
Publication Date
Aug 17, 2011
Accession Number
ADA548346

Entities

People

  • Kouji Hazu
  • Shigefusa Chichibu

Organizations

  • Tohoku University

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Crystals
  • Electron Microscopy
  • Electronic Mail
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunctions
  • Microscopy
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology