Probing and Manipulation of Coherent States in Ferromagnetic Narrow Gap Semiconductors with an Eye Towards Developing Concepts for New Device Functionalities

Abstract

The goal of this project has been to study coherent phenomena in narrow gap semiconductors (NGSs) including III-V ferromagnetic structures, such as InMnAs and InMnSb, with an emphasis on dynamical aspects, such as charge and spin dynamics. In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of NGSs and our results are important for understanding the electronic and magnetic states in these material systems. Narrow gap semiconductors have significant potentials for applications in infrared spin photonics and in spin transport devices due to small energy gap, and much higher carrier mobility than in other III Mn V semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2011
Accession Number
ADA548686

Entities

People

  • Giti Khodaparast

Organizations

  • Virginia Tech

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Carrier Mobility
  • Cyclotron Resonance
  • Energy Bands
  • Energy Gaps
  • Ferromagnetic Materials
  • Films
  • Magnetic Fields
  • Magnetic Properties
  • Materials
  • Narrow Band Gap Semiconductors
  • Physics
  • Quantum Properties
  • Semiconductor Physics
  • Semiconductors
  • Solid State Physics
  • Spin-Orbit Interaction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Science - Quantum Dots