An Investigation of DC-DC Converter Power Density Using Si and SiC MOSFETS
Abstract
This research focuses on a kW-level active-b ridge DC-D C converter. Using two hardware prototypes, the study contraste the per formance of the i nverter-b1 idge section of the converter using either sta te-of-the-art Si licon (Si) or Silicon Carbide (SiC) MOSFET s. Innovations in SiC MOSFET technology have facilitated reductions in steady-state switch losses and operation at higher device temper<1 tures. By enabling reductions in losses and higher-temperature operation, converter thermal management requirement is dcueased. T hus, SiC devices offer the possibility of increased converter power density. Converter power density is eva luated by meas uring the maximum power throughput of the converter for a given maximum device j unction temperature T he physica l volumes of the two converters are held fixed so that throughput power will represent a means of directly quant1 fying power densi ty. Tn this paper, the design of the converter is detailed, including gate drivers and snubber circuitry, and testing resu lts are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 07, 2010
- Accession Number
- ADA548845
Entities
People
- Matthew A. Porter
Organizations
- United States Naval Academy