Photoluminescence of PbS Quantum Dots on Semi-Insulating GaAs (Postprint)

Abstract

We studied the emission properties of colloidal PbS quantum dots (QDs) (5.3 nm) dispersed on semi-insulating GaAs in the temperature range of 5-300 K by employing Fourier transform infrared photoluminescence spectroscopy. The results reveal that the PbS QDs alter and notably enhance the emission features of the GaAs substrate itself. The dependence of the QD emission peak position on temperature is modeled equivalently well with the well-known empirical Varshni equation and with a relation based on thermodynamics. The work reveals that emission properties of PbS QDs do not follow predictably general rules but are determined sensitively by the preparation method and substrate used.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2010
Accession Number
ADA549100

Entities

People

  • B. Ullrich
  • G. J. Brown
  • X. Y. Xiao

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Band Gaps
  • Detectors
  • Electron Microscopes
  • Electron Microscopy
  • Emission
  • Equations
  • Materials
  • Measurement
  • Microscopy
  • Photoluminescence
  • Physics
  • Quantum Dots
  • Spectra
  • Spectroscopy
  • Substrates

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing