Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters (Postprint)

Abstract

We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2011
Accession Number
ADA549101

Entities

People

  • Daniel S. Green
  • Eric R. Heller
  • Rama Vetury

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Charge Density
  • Electrical Properties
  • Electron Microscopes
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Geometry
  • High Electron Mobility Transistors
  • Materials
  • Military Research
  • Semiconductors
  • Three Dimensional
  • Transistors

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics