Compact Method for Modeling and Simulation of Memristor Devices
Abstract
A compact model and simulation methodology for chalcogenide based memristor devices is proposed. From a microprocessor design view point, it is important to be able to simulate large numbers of devices within the integrated circuit architecture in order to speed up reliably the development process. Ideally, device models would accurately describe the characteristic device behavior and would be represented by single-valued equations without requiring the need for recursive or numerically intensive solutions. With this in mind, we have developed an empirical chalcogenide compact memristor model that accurately describes all regions of operations of memristor devices employing single-valued equations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2011
- Accession Number
- ADA549427
Entities
People
- Achyut Timilsina
- Antonio Oblea
- Bryant Wysocki
- James W. Bohl
- Kristy A Campbell
- Nathan D. McDonald
- Peter Rozwood
- Robinson E. Pino
Organizations
- Air Force Research Laboratory