Antibonding Ground States in InAs Quantum-Dot Molecules

Abstract

Coherent tunneling between two InAs quantum dots forms delocalized molecular states. Using magnetophotoluminescence spectroscopy we show that when holes tunnel through a thin barrier, the lowest energy molecular state has bonding orbital character. However, as the thickness of the barrier increases, the molecular ground state changes character from a bonding orbital to an antibonding orbital, confirming recent theoretical predictions. We explain how the spin-orbit interaction causes this counterintuitive reversal by using a four-band k dot p model and atomistic calculations that account for strain.

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Document Details

Document Type
Technical Report
Publication Date
Jan 28, 2009
Accession Number
ADA549964

Entities

People

  • Allan S. Bracker
  • D. Gammon
  • J. I. Climente
  • M. F. Doty
  • M. Korkusinski
  • M. Scheibner
  • P. Hawrylak

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Angular Momentum
  • Atoms
  • Crystal Lattices
  • Diatomic Molecules
  • Electric Fields
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Ground State
  • Magnetic Fields
  • Materials
  • Materials Science
  • Molecules
  • Quantum Dots
  • Quantum Properties
  • Spin-Orbit Interaction
  • Wave Functions

Fields of Study

  • Physics

Readers

  • Quantum Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots
  • Space