Demonstration of High-Mobility Electron and Hole Transport in a Single InGaSb Well for Complementary Circuits

Abstract

Heterostructures consisting of an InGaSb quantum well situated between AlGaSb barriers were grown by molecular beam epitaxy. Calculations indicate a type-I band structure with substantial valence and conduction band offsets that can allow for the confinement of either electrons or holes in the InGaSb. Quantum wells with n-type conduction were achieved using modulation doping, with Te located in the barrier above the quantum well. A set of barrier layers was found which resulted in a sample with an In0.2Ga0.8Sb quantum well that exhibited an electron mobility of 3900cm2/V s as grown. After removal of upper barrier layers including the Te by selective etching, the conductivity switched to p-type, with hole mobilities near 800cm2/V s. This design could allow the integration of low-power n- and p-channel field-effect transistors for complementary logic applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2009
Accession Number
ADA550045

Entities

People

  • Brian R. Bennett
  • James G. Champlain
  • Mario G. Ancona
  • Nicolas A. Papanicolaou
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Compound Semiconductors
  • Conduction Bands
  • Crystal Growth
  • Demonstrations
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Mobility
  • Molecular Beam Epitaxy
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing