Effect of Threading Screw and Edge Dislocations on Transport Properties of 4H-SiC Homoepitaxial Layers

Abstract

Local recombination properties of threading screw and edge dislocations in 4H SiC epitaxial layers have been studied using electron beam induced current (EBIC). The minority carrier diffusion length in the vicinity of dislocations was found to vary with dislocation type. Screw dislocations had a more pronounced impact on diffusion length than the edge dislocations, evidencing stronger recombination activity. Temperature dependence of EBIC contrast of dislocations suggests that their recombination activity is controlled by deep energy levels in the vicinity of dislocation cores. This paper shows that the type of dislocation (screw or edge) can be identified from analysis of EBIC contrast.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA550177

Entities

People

  • B. L. Vanmil
  • C. R. Eddy Jr.
  • D. Kurt Gaskill
  • J. A. Freitas Jr.
  • K. Lew
  • P. G. Muzykov
  • R. L. Myers-ward
  • S. I. Maximenko
  • T. S. Sudarshan

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Dislocations
  • Electron Beams
  • Electron Holes
  • Electron Microscopes
  • Electrons
  • Energy Bands
  • Energy Levels
  • Films
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Semiconductors
  • Silicon Carbide
  • Transport Properties
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics