Thick Homoepitaxial GaN with Low Carrier Concentration for High Blocking Voltage

Abstract

High voltage GaN Schottky diodes require a thick blocking layer with an exceptionally low carrier concentration. To this aim, a metal organic chemical vapor deposition process was developed to create a (14 micron) thick stress-free homoepitaxial GaN film. Low temperature photoluminescence measurements are consistent with low donor background and low concentration of deep compensating centers. Capacitance-voltage measurements performed at 30 deg C verified a low level of about 2 x 10(exp 15)/cu cm of n-type free carriers (unintentional doping), which enabled a breakdown voltage of about 500 V. A secondary ion mass spectrometry depth profile confirms the low concentration of background impurities and X-ray diffraction extracted a low dislocation density in the film. These results indicate that thick GaN films can be deposited with free carrier concentrations sufficiently low to enable high voltage rectifiers for power switching applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA550283

Entities

People

  • C. R. Eddy Jr.
  • E. A. Imhoff
  • F. J. Kub
  • J. A. Freitas Jr.
  • Marko J. Tadjer
  • Michael A. Mastro

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Crystal Growth
  • Diffraction
  • Diodes
  • Dislocations
  • Films
  • Impurities
  • Low Temperature
  • Mass Spectrometry
  • Measurement
  • Metal-Semiconductor Junctions
  • Scattering
  • Schottky Diodes
  • Spectra
  • Spectrometers
  • Spectrometry
  • Spectroscopy
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.