Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n(-) 4H-SiC Epitaxial Layers
Abstract
Wide bandgap semiconductors are of great current interest, as their material properties high thermal conductivity, high breakdown voltage, high thermal stability and chemical inertness make them ideal for applications that demand high power and/or high frequency operation that is well beyond the limitations of Si-based technology. Consequently, there is much interest in these systems for high power solid-state switching and communications applications. As a result, much research has been carried out in the direct-gap GaN and GaN/AlGaN systems for high power, high frequency microwave transistors and in SiC (indirect band gap) for high power bipolar switching devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2009
- Accession Number
- ADA550334
Entities
People
- P. B. Klein
Organizations
- United States Naval Research Laboratory