Thermal Transport in 1-D and 2-D Nanostructures

Abstract

We have measured the thermal conductivity of individual nanowires with engineered defects. The key emphasis is on studying how the phonon spectrum can be modified using defect engineering in 1D and 2D systems. Our work with nanowires suggests that strong localization of phonons is possible due to twin defects oriented perpendicular to the axis of nanowires. This results in the reduction of measured thermal conductivity by three orders of magnitude. As a result of the significant reduction in thermal conductivity the phonon contribution to thermal conductivity becomes comparable to the electronic contribution. A significant fraction of the electronic contribution to thermal conductivity can be tuned by an electrostatic gate - a realization of a thermal field effect transistor and analogue of the electrical FET.

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Document Details

Document Type
Technical Report
Publication Date
Nov 08, 2011
Accession Number
ADA551658

Entities

People

  • Mandar M Deshmukh

Organizations

  • Tata Institute of Fundamental Research

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Conductivity
  • Crystal Structure
  • Dielectrics
  • Electrical Properties
  • Field Effect Transistors
  • Low Temperature
  • Materials
  • Nanostructures
  • Nanowires
  • Phase Transformations
  • Resonant Frequency
  • Thermal Conductivity
  • Thin Films
  • Transistors
  • Transition Temperature
  • Transport Ships
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics