AlInN HEMT Grown on SiC by Metalorganic Vapor Phase Epitaxy for Millimeter-Wave Applications
Abstract
In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (<1%). The low Rsh of 215V/sq was obtained with an excellent standard deviation of 1.1% across 300 wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm2/V s and sheet charge density of 1.76 1013/cm2. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1mm and 25 nm Al2O3 passivation show maximum drain current (IDS,max) of 2.36 A/mm at VGS 2 V. Gate recessed devices with 0.15mm gate length and 25 nm Al2O3 passivation resulted in maximum transconductance (gm) of 675 mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum fT is 86 GHz and fmax is 91.7 GHz.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2009
- Accession Number
- ADA552183
Entities
People
- Antonio Crespo
- Daniel Gorka
- Han Wang
- James K. Gillespie
- Jinwoork W. Chung
- Kelson D. Chabak
- Manuel Trejo
- Shiping Guo
- Tomás Palacios
- Xiang Gao