Non-equilibrium GaNAs Alloys with Band Gap Ranging from 0.8-3.4 eV
Abstract
A new alloy system, the GaN(sub 1-x)As(sub x) alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 < x < 0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from ~3.4 eV in GaN to~0.8 eV at x~0.85. The reduction of the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x > 0.2, and to the upward movement of the valence band for alloys with x < 0.2.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2010
- Accession Number
- ADA552321
Entities
People
- C. R. Staddon
- F. Luckert
- I. Demchenko
- J. D. Denlinger
- K. M. Yu
- M. Hawkridge
- R. Broesler
- S. V. Novikov
- V. M. Kao
- Z. Liliental-weber
Organizations
- University of California, Berkeley