Hall Mobilities in GaNxAs1-x
Abstract
In this work we report a systematic study of the electron and hole mobilities of GaN(x)As(1-x) alloys with different dopants (Zn, Te) and carrier concentrations (10(17) - 10(19) cm(-3). We found a very slight reduction of the hole mobility in P-GaN(x)As(1-x) compared to p-GaAs, indicating that for small N contents (approx. 1.6%) the valence band is not affected by the N incorporation. In a striking contrast, incorporation of even small amounts of N leads to an abrupt reduction of the electron mobility in n-GaN(x)As(1-x). We further show that the processes that limit the mobility in GaN(x)As(1-x) can be explained by the band broadening and the random field scatterings. Considering these two scattering mechanisms we calculated the dependence of electron mobilities on electron concentration as well as on N composition in GaN(x)As(1-x). The calculations agree reasonably well with experiment data of maximum electron mobilities with alloy composition.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2010
- Accession Number
- ADA552818
Entities
People
- German Gonzalez-diaz
- Javier Olea
- Kin M. Yu
- Wladek Walukiewicz
Organizations
- University of California, Berkeley