Structural Differences in Mg-doped InN - Indication of Polytypism

Abstract

Transmission Electron Microscopy shows that the InN samples doped with either increasing or constant Mg concentration follow a cation or anion substrate polarity. In-polar samples change growth polarity when the Mg concentration is >1019 cm-3. N-polar samples have much higher density of planar defects than In-polar samples and their presence leads to a decrease in dislocation density. In the N-polar samples equally spaced planar defects are observed for Mg concentration >1019 cm-3. Three different polytypes (2H, 3C and 4H) were observed in this type of samples. A band of planar defects with thick layers of a cubic material (3C) is observed for Mg concentration >1020 cm-3. At this Mg concentration only n-type conductivity was reported earlier.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA552834

Entities

People

  • A. Yoshikawa
  • M. E. Hawkridge
  • Xufeng Wang
  • Z. Liliental-weber

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Boundaries
  • Conductivity
  • Dislocations
  • Electrical Measurement
  • Electron Microscopy
  • Electrons
  • Energy Bands
  • Films
  • High Resolution
  • Materials
  • Materials Science
  • Measurement
  • Microscopy
  • Solid State Physics
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Space