Epitaxial Hybrid Silicon Technology

Abstract

We have investigated a wide range of conditions for MOCVD epitaxial layer overgrowth, and studies the impact on coalescence on the ELO patterns and orientations. We have found conditions that allow us to grow such that the coalesced regions are defect free. This is a first for MOCVD and it is the first for growth across a significantly wide field. The fundamental nucleation and growth of As and Sb based III-V semiconductors on SiO2 masked Si(100) and InP(100) surfaces were investigated via molecular beam epitaxy (MBE) to determine the best growth windows for nucleation and lateral overgrowth. Antimonides provide better lateral overgrowth than arsenides indicating transitions from layer-by-layer to step flow growth regimes in MBE may be critical for ELO.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2011
Accession Number
ADA552875

Entities

People

  • Brian D. Schultz
  • Chris J. Palmstrøm
  • J. E. Bowers
  • M. J. Heck
  • Philip A. Mages

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Coalescence
  • Contracts
  • Crystal Growth
  • Epitaxial Growth
  • Government Procurement
  • Governments
  • Information Exchange
  • Lasers
  • Low Temperature
  • Materials
  • Measurement
  • Semiconductors
  • Thickness
  • United States

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene