Synthesis of Nitrogen-Doped Graphene Films for Lithium Battery Application
Abstract
We demonstrate a controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique. Nitrogen-doped graphene was grown directly on Cu current collectors and studied for its reversible Li-ion intercalation properties. Reversible discharge capacity of N-doped graphene is almost double compared to pristine graphene due to the large number of surface defects induced due to N-doping. All the graphene films were characterized by Raman spectroscopy, transmission electron microscopy and X-ray photoemission spectroscopy. Direct growth of active electrode material on current collector substrates makes this a feasible and efficient process for integration into current battery manufacture technology.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2010
- Accession Number
- ADA552925
Entities
People
- Anchal Srivastava
- Arava L. Reddy
- Hemtej Gullapalli
- Madan Dubey
- Pulickel Ajayan
- Sanketh R. Gowda
Organizations
- Rice University